byg20d-m3/hm3, byg20g- m3/hm3, byg20j-m3/hm3 www.vishay.com vishay general semiconductor revision: 19-feb-15 1 document number: 89473 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast avalanche smd rectifier features ? low profile package ? ideal for automated placement ? glass passivated pallet chip junction ? low reverse current ? soft recovery characteristics ? ultrafast reverse recovery time ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency re ctification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive and telecommunication. mechanical data case: do-214ac (sma) ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade ? base p/nhm3 - halogen-free, rohs-compliant, and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 2 whisker test, hm3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 1.5 a v rrm 200 v, 400 v, 600 v i fsm 30 a i r 1.0 a v f at i f 1.4 v t rr 75 ns e r 20 mj t j max. 150 c package do-214ac (sma) diode variatio ns single die do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol byg20d byg20g byg20j unit device marking code byg20d byg20g byg20j maximum repetitive peak reverse voltage v rrm 200 400 600 v average forward current i f(av) 1.5 a peak forward surge current 10 ms single half ? sine-wave superimposed on rated load i fsm 30 a pulse energy in avalanche mode, ? non repetitive (inducti ve load switch off) ? i (br)r = 1 a, t j = 25 c e r 20 mj operating junction and storage temperature range t j , t stg -55 to +150 c
byg20d-m3/hm3, byg20g- m3/hm3, byg20j-m3/hm3 www.vishay.com vishay general semiconductor revision: 19-feb-15 2 document number: 89473 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse test: 300 s pulse width, 1 % duty cycle notes (1) mounted on epoxy-glass hard tissue (2) mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu (3) mounted on al-oxide-ceramic (al 2 o 3 ), 50 mm 2 35 m cu note (1) aec-q101 qualified electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol byg20d byg20g byg20j unit maximum instantaneous forward voltage i f = 1 a t j = 25 c v f (1) 1.3 v i f = 1.5 a 1.4 maximum dc reverse current v r = v rrm t j = 25 c i r 1 a t j = 100 c 10 maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 75 ns thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol byg20d byg20g byg20j unit typical thermal resistance, junction to lead, t l = const. r ? jl 25 c/w typical thermal resistance, junction to ambient r ? ja (1) 150 c/w r ? ja (2) 125 r ? ja (3) 100 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode byg20d-m3/tr 0.064 tr 1800 7" diameter plastic tape and reel byg20d-m3/tr3 0.064 tr3 7500 13" di ameter plastic tape and reel byg20dhm3/tr (1) 0.064 tr 1800 7" diameter plastic tape and reel byg20dhm3/tr3 (1) 0.064 tr3 7500 13" diameter plastic tape and reel
byg20d-m3/hm3, byg20g- m3/hm3, byg20j-m3/hm3 www.vishay.com vishay general semiconductor revision: 19-feb-15 3 document number: 89473 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current vs. forward voltage fig. 2 - max. average forward current vs. ambient temperature fig. 3 - reverse current vs. junction temperature fig. 4 - max. reverse power diss ipation vs. junction temperature fig. 5 - diode capacitance vs. reverse voltage fig. 6 - reverse recovery time vs. forward current 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 for w ard v oltage ( v ) for w ard c u rrent (a) t j = 25 c t j = 150 c 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 100 8 0 60 40 20 0 120 140 160 am b ient temperat u re (c) a v erage for w ard c u rrent (a) v r = v rrm half sine- w a v e r ja 25 k/ w r ja 125 k/ w r ja 150 k/ w 1 10 100 25 50 75 100 125 150 re v erse c u rrent ( a) j u nction tempera t u re (c) v r = v rrm p r - limit at 100 % v r 0 10 20 30 40 70 25 50 75 100 125 150 re v erse po w er dissipation (m w ) j u nction temperat u re (c) v r = v rrm p r - limit at 8 0 % v r 50 60 0 5 10 15 20 25 30 0.1 1 10 100 f = 1 mhz re v erse v oltage ( v ) diode capacitance (pf) 0 0.2 0.4 0.6 0. 8 0 100 200 300 400 600 1.0 500 i r = 0.5 a, i r = 0.125 a re v erse reco v ery time (ns) for w ard c u rrent (a) t a = 125 c t a = 100 c t a = 75 c t a = 25 c t a = 50 c
byg20d-m3/hm3, byg20g- m3/hm3, byg20j-m3/hm3 www.vishay.com vishay general semiconductor revision: 19-feb-15 4 document number: 89473 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - reverse recovery charge vs. forward current fig. 8 - thermal response package outline dimensions in inches (millimeters) 0 50 100 150 200 0 0.2 0.4 0.6 0. 8 1.0 re v erse reco v ery charge (nc) for w ard c u rrent (a) i r = 0.5 a, i r = 0.125 a t a = 125 c t a = 100 c t a = 75 c t a = 25 c t a = 50 c 1 10 100 1000 thermal resistance for p u lse cond. (k/ w ) p u lse length (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 single p u lse 125 k/ w dc t p /t = 0.5 t p /t = 0.2 t p /t = 0.1 t p /t = 0.02 t p /t = 0.05 t p /t = 0.01 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pad layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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